Fabrication of silicon nanotip arrays with high aspect ratio by cesium chloride self-assembly and dry etching
نویسندگان
چکیده
منابع مشابه
Fabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching
In this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. In order to define silicon nanostructures, Metal-assisted chemical etching (MaCE) was carried out with silver catalyst. Provided solution (or materiel) in combination with laser interference lithogr...
متن کاملRapid Fabrication of High-Aspect-Ratio Platinum Microprobes by Electrochemical Discharge Etching
Using a graphite crucible as the counter-electrode, platinum microprobes with an aspect ratio of 30 and a tip apex radius less than 100 nm were fabricated by an electrochemical discharge etching process. The "neck-in" structure on the platinum wire induced by the electrical discharge at the liquid-air interface plays a key role in the probe shape and the voltage of the following pure electroche...
متن کاملHigh Aspect Ratio Si Etching in STS2
Deep reactive ion etching (DRIE) is one of the most important etching techniques because it is independent of crystal orientation and does not require any wet process. DRIE can be applied for many applications. For examples, this technique can be used to fabricate MEMS devices (e.g. accelerometers, scanners, etc.), microfluidic devices, electrical through wafer interconnects, and so on. In many...
متن کاملControlled Fabrication of High-Aspect-Ratio Microstructures in Silicon at Etching Rates Beyond State-of-the-Art Microstructuring Technologies
The controlled electrochemical etching at room temperature of deep (up to 200 μm) silicon microstructures with aspect ratio ranging from 5 to 100 and etching rates from 10 to 3 μm/min, respectively, is here reported and discussed. This allows silicon microfabrication technology entering a region in the parameter space etching-rate vs. aspect-ratio that was so far unreachable for silicon microst...
متن کاملPrediction of ultra-high aspect ratio nanowires from self-assembly.
We employ a combination of ab initio total energy calculations and classical molecular dynamics (MD) simulations to investigate the possible self-assembly of nanoscale objects into ultrahigh aspect ratio chains and wires. The ab initio calculations provide key information regarding selective chemical functionalization for end-to-end attraction and the subtle interplay of the energy landscape, w...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: AIP Advances
سال: 2014
ISSN: 2158-3226
DOI: 10.1063/1.4869238